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IPU103N08N3 G
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.5V @ 46µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
PG-TO251-3
Series
OptiMOS™
Rds On (Max) @ Id, Vgs
10.3mOhm @ 46A, 10V
Power Dissipation (Max)
100W (Tc)
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Package
Tube
Operating Temperature
-55°C ~ 175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
2410 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
50A (Tc)
Base Product Number
IPU103N
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IPU103N08N3 G Datasheet PDF
Data sheet
Datasheet File Browse